发明授权
- 专利标题: Method for fabricating GaN-based nitride layer
- 专利标题(中): 制造GaN基氮化物层的方法
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申请号: US10543318申请日: 2004-08-21
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公开(公告)号: US07498244B2公开(公告)日: 2009-03-03
- 发明人: Soo Kun Jeon , Moon Sik Jang
- 申请人: Soo Kun Jeon , Moon Sik Jang
- 申请人地址: KR Kyunggi-do KR Kyungki-do
- 专利权人: Epivalley Co., Ltd.,Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Epivalley Co., Ltd.,Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Kyunggi-do KR Kyungki-do
- 代理机构: Husch Blackwell Sanders LLP
- 优先权: KR10-2003-0085334 20031128
- 国际申请: PCT/KR2004/002114 WO 20040821
- 国际公布: WO2005/053042 WO 20050609
- 主分类号: H01L21/36
- IPC分类号: H01L21/36
摘要:
The present invention relates to a method for fabricating a gallium nitride(GaN) based nitride layer including a step of forming a silicon carbide buffer layer on a substrate, a step of forming a wetting layer having a composition of In(x1)Ga(y1)N (0
公开/授权文献
- US20060154454A1 Method for fabricating gaN-based nitride layer 公开/授权日:2006-07-13