Invention Grant
- Patent Title: Method of planarizing an inter-metal insulation film
- Patent Title (中): 平面化金属间绝缘膜的方法
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Application No.: US11298678Application Date: 2005-12-12
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Publication No.: US07498263B2Publication Date: 2009-03-03
- Inventor: Se-rah Yun , Chang-ki Hong , Jae-dong Lee
- Applicant: Se-rah Yun , Chang-ki Hong , Jae-dong Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2005-0000377 20050104
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method for forming a planarized inter-metal insulation film is provided. The method includes applying a CMP process to an insulation film as controlled by a polish-stop layer pattern formed on an underlying metal wiring pattern. A PAE based material may be used to form the polish-stop layer.
Public/Granted literature
- US20060148258A1 Method of planarizing an inter-metal insulation film Public/Granted day:2006-07-06
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