Invention Grant
US07499341B2 Output circuit, semiconductor memory device having the same, and method of expanding a valid output data window
有权
输出电路,具有相同的半导体存储器件以及扩展有效输出数据窗口的方法
- Patent Title: Output circuit, semiconductor memory device having the same, and method of expanding a valid output data window
- Patent Title (中): 输出电路,具有相同的半导体存储器件以及扩展有效输出数据窗口的方法
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Application No.: US11601027Application Date: 2006-11-17
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Publication No.: US07499341B2Publication Date: 2009-03-03
- Inventor: Woo-Jin Lee , Hyun-Dong Kim , Seong-Jin Jang
- Applicant: Woo-Jin Lee , Hyun-Dong Kim , Seong-Jin Jang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello LLP
- Priority: KR10-2005-0113327 20051125
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A semiconductor memory device and a method of expanding a valid output data window are described. The semiconductor memory device includes a memory cell array and an output circuit. The memory cell array generates read data having a plurality of bits. The output circuit outputs the read data sequentially in response to a clock signal in a normal mode. On the other hand, the output circuit selectively outputs the bits of the read data by latching bits to be tested among bits of the read data, and by electrically disconnecting bits not to be tested among bits of the read data in response to a plurality of switch control signals in a test mode. Therefore a valid data window of an output data may be expanded.
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