发明授权
- 专利标题: Synchronous semiconductor memory device
- 专利标题(中): 同步半导体存储器件
-
申请号: US11850754申请日: 2007-09-06
-
公开(公告)号: US07499370B2公开(公告)日: 2009-03-03
- 发明人: Hyun-jin Kim , Ho-young Song , Youn-sik Park , Seong-jin Jang
- 申请人: Hyun-jin Kim , Ho-young Song , Youn-sik Park , Seong-jin Jang
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2006-0085882 20060906
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
A synchronous semiconductor memory device includes an output control signal generator, which generates an output control signal corresponding to a signal obtained by delaying a read information signal in response to a delay internal clock signal obtained by dividing an internal clock signal by n, first and second sampling signals obtained by delaying the internal clock signal, a first output control clock signal obtained by dividing the internal clock signal by n, and a column address strobe (CAS) latency signal. The synchronous semiconductor memory device also includes a data output buffer, which outputs data by buffering internal data in response to the output control signal and the first output control clock signal.
公开/授权文献
- US20080056057A1 SYNCHRONOUS SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2008-03-06