发明授权
- 专利标题： System and method for photolithography in semiconductor manufacturing
- 专利标题（中）： 半导体制造中的光刻系统和方法
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申请号： US11216658申请日： 2005-08-31
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公开(公告)号： US07501227B2公开(公告)日： 2009-03-10
- 发明人: Kuei Shun Chen , Chin-Hsiang Lin , David Ding-Chung Lu
- 申请人： Kuei Shun Chen , Chin-Hsiang Lin , David Ding-Chung Lu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： G03F7/20
- IPC分类号： G03F7/20
摘要：
A method for producing a pattern on a substrate includes providing at least one exposure of the pattern onto a layer of the substrate by a higher-precision lithography mechanism and providing at least one exposure of the pattern onto a layer of the substrate by a lower-precision lithography mechanism. The exposures can be done in either order, and additional exposures can be included. The higher-precision lithography mechanism can be immersion lithography and the lower-precision lithography mechanism can be dry lithography.
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