发明授权
- 专利标题： Method for forming deposited film and photovoltaic element
- 专利标题（中）： 沉积膜和光伏元件的形成方法
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申请号： US11874352申请日： 2007-10-18
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公开(公告)号： US07501305B2公开(公告)日： 2009-03-10
- 发明人: Yasuyoshi Takai , Hiroshi Shimoda , Shotaro Okabe , Koichi Matsuda , Hidetoshi Tsuzuki
- 申请人： Yasuyoshi Takai , Hiroshi Shimoda , Shotaro Okabe , Koichi Matsuda , Hidetoshi Tsuzuki
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2006-287448 20061023
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.