发明授权
- 专利标题： Method and system for forming an oxynitride layer
- 专利标题（中）： 用于形成氧氮化物层的方法和系统
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申请号： US11093260申请日： 2005-03-30
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公开(公告)号： US07501352B2公开(公告)日： 2009-03-10
- 发明人: Masanobu Igeta , Cory Wajda , David L. O'Meara , Kristen Scheer , Toshihara Eurakawa
- 申请人： Masanobu Igeta , Cory Wajda , David L. O'Meara , Kristen Scheer , Toshihara Eurakawa
- 申请人地址： JP Tokyo US NY Armonk
- 专利权人： Tokyo Electron, Ltd.,International Business Machines Corporation (“IBM”)
- 当前专利权人： Tokyo Electron, Ltd.,International Business Machines Corporation (“IBM”)
- 当前专利权人地址： JP Tokyo US NY Armonk
- 代理机构： DLA Piper LLP US
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.
公开/授权文献
- US20060228902A1 Method and system for forming an oxynitride layer 公开/授权日：2006-10-12