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US07504700B2 Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method 有权
形成用于高性能CMOS应用的超薄[[HfSiO]]金属硅酸盐膜和在所述方法中形成的半导体结构的方法

Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method
摘要：
A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controlling stable material on top of a base gate dielectric layer, and then forming a uniform layer which contains a source of transitional metal atoms, and then annealing the structure to diffuse the transitional metal atoms from their source through the diffusion-controlling material and into the base gate dielectric layer.
摘要（中）：

一种半导体结构及其制造方法，包括在基极电介质层的顶部形成扩散控制稳定材料的均匀缓冲层，然后形成含有过渡金属原子源的均匀层，然后退火 结构将过渡金属原子从其源极扩散通过扩散控制材料并进入基极栅极电介质层。

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