发明授权
- 专利标题： Content addressable memory with multi-row write function
- 专利标题（中）： 内容可寻址内存多行写功能
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申请号： US10883160申请日： 2004-07-01
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公开(公告)号： US07505295B1公开(公告)日： 2009-03-17
- 发明人: Bindiganavale S. Nataraj , Sandeep Khanna
- 申请人： Bindiganavale S. Nataraj , Sandeep Khanna
- 申请人地址： US CA Mountain View
- 专利权人： NetLogic Microsystems, Inc.
- 当前专利权人： NetLogic Microsystems, Inc.
- 当前专利权人地址： US CA Mountain View
- 代理机构： Shemwell Mahamedi LLP
- 代理商 William L. Paradice, III
- 主分类号： G11C15/00
- IPC分类号： G11C15/00 ; G11C7/00
摘要：
A content addressable memory (CAM) device having a multi-row write function. The CAM device includes a CAM array and an address circuit. The CAM array includes a plurality of CAM cells and word lines coupled to respective rows of the CAM cells. The address circuit is coupled to the CAM array and configured to activate a plurality of the word lines simultaneously to enable a write value to be stored within a selected plurality of the rows of CAM cells.
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