发明授权
- 专利标题: Method of configuring superconducting random access memory, device structure of the same, and superconducting drive circuit
- 专利标题(中): 配置超导随机存取存储器,其器件结构以及超导驱动电路的方法
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申请号: US11374028申请日: 2006-03-14
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公开(公告)号: US07505310B2公开(公告)日: 2009-03-17
- 发明人: Shuuichi Nagasawa , Mutsuo Hidaka , Keiichi Tanabe
- 申请人: Shuuichi Nagasawa , Mutsuo Hidaka , Keiichi Tanabe
- 申请人地址: JP Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2005-070401 20050314; JP2005-082917 20050323; JP2005-082939 20050323; JP2005-090689 20050328
- 主分类号: G11C11/44
- IPC分类号: G11C11/44
摘要:
In a superconducting random access memory according to this invention, drive lines such as a word line and a bit line, and a sense line for accessing a memory cell array are each divided into a plurality of blocks and an in-block signal propagation circuit having a level-logic drive circuit and sense circuit each with high load drive capability is used for signal propagation in each of the blocks. Further, for long-distance signal propagation between the blocks, superconducting passive transmission lines formed by single flux quantum (SFQ) devices and capable of high-speed operation are used. As a result, the high-speed operation as a whole is enabled. It is possible to additionally use splitters or confluence buffers and latch circuits and, further, a binary tree structure may be adopted.
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