发明授权
- 专利标题: Manufacturing method of semiconductor device
- 专利标题(中): 半导体器件的制造方法
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申请号: US11381262申请日: 2006-05-02
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公开(公告)号: US07509623B2公开(公告)日: 2009-03-24
- 发明人: Sachiko Kobayasi , Toshiba Kotani , Satoshi Tanaka , Susumu Watanabe , Mitsuhiro Yano
- 申请人: Sachiko Kobayasi , Toshiba Kotani , Satoshi Tanaka , Susumu Watanabe , Mitsuhiro Yano
- 申请人地址: JP
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP
- 代理机构: Kilpatrick Stockton LLP
- 优先权: JPJP2001-398438 20011227
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; G03F1/00 ; G03F7/00
摘要:
A pattern correction method executed by a computer includes a first correction and a second correction. The first correction is executed by calculating a correction value, in consideration for an optical proximity effect, for edges (first edges) meeting a condition among the edges constituting a designed pattern. Subsequently, The second correction is executed for an edge (second edge) which does not meet the condition, by use of the correction value of any one of the edges (first edges) adjacent to the second edge among the first edges for which the first correction is executed, thus connecting the corrected first edge and the corrected second edge by a line segment. The pattern is corrected to a shape suitable for a mask drawing and a check with simple processing.
公开/授权文献
- US20060190921A1 Manufacturing Method of Semiconductor Device 公开/授权日:2006-08-24
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