发明授权
- 专利标题： Plasma generation and control using dual frequency RF signals
- 专利标题（中）： 使用双频RF信号的等离子体发生和控制
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申请号： US11416468申请日： 2006-05-02
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公开(公告)号： US07510665B2公开(公告)日： 2009-03-31
- 发明人: Steven C. Shannon , Alexander Paterson , Theodoros Panagopoulos , John P. Holland , Dennis S. Grimard , Daniel J. Hoffman
- 申请人： Steven C. Shannon , Alexander Paterson , Theodoros Panagopoulos , John P. Holland , Dennis S. Grimard , Daniel J. Hoffman
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser IP Law Group
- 主分类号： G01R31/00
- IPC分类号： G01R31/00
摘要：
A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.
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