Invention Grant
- Patent Title: Plasma generation and control using dual frequency RF signals
- Patent Title (中): 使用双频RF信号的等离子体发生和控制
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Application No.: US11416468Application Date: 2006-05-02
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Publication No.: US07510665B2Publication Date: 2009-03-31
- Inventor: Steven C. Shannon , Alexander Paterson , Theodoros Panagopoulos , John P. Holland , Dennis S. Grimard , Daniel J. Hoffman
- Applicant: Steven C. Shannon , Alexander Paterson , Theodoros Panagopoulos , John P. Holland , Dennis S. Grimard , Daniel J. Hoffman
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser IP Law Group
- Main IPC: G01R31/00
- IPC: G01R31/00
Abstract:
A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.
Public/Granted literature
- US20060266735A1 Plasma generation and control using dual frequency RF signals Public/Granted day:2006-11-30
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