发明授权
- 专利标题: Fabricating method of wafer protection layers
- 专利标题(中): 晶圆保护层的制造方法
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申请号: US11162606申请日: 2005-09-16
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公开(公告)号: US07510909B2公开(公告)日: 2009-03-31
- 发明人: Yu-Pin Tsai
- 申请人: Yu-Pin Tsai
- 申请人地址: TW Kaohsiung
- 专利权人: Advanced Semiconductor Engineering, Inc.
- 当前专利权人: Advanced Semiconductor Engineering, Inc.
- 当前专利权人地址: TW Kaohsiung
- 代理机构: Jianq Chyun IP Office
- 优先权: TW93127970A 20040916
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/48 ; H01L21/50
摘要:
A fabricating method of wafer protection layers and a wafer structure are provided. The fabricating method includes providing a wafer first. The wafer includes pluralities of chips and has an active surface, a corresponding reverse surface and a plurality of pre-cut trenches on the active surface. On the active surface, pluralities of bumps are disposed. Next, a first curing-type protection layer and a pellicle are disposed over the active surface. Afterwards, the first curing-type protection layer is asked to contact the active surface. Besides, a second curing-type protection layer is disposed on the reverse surface. Afterward, the first and the second curing-type protection layer are cured. Finally, the wafer is cut through the pre-cut trenches to separate the chips from the wafer.
公开/授权文献
- US20060057778A1 FABRICATING METHOD OF WAFER PROTECTION LAYERS 公开/授权日:2006-03-16
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