发明授权
- 专利标题: Electrode line structure having fine line width and method of forming the same
- 专利标题(中): 具有细线宽度的电极线结构及其形成方法
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申请号: US11651322申请日: 2007-01-09
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公开(公告)号: US07510969B2公开(公告)日: 2009-03-31
- 发明人: Joo-won Lee , Kang-soo Chu , Jae-eun Park , Jong-ho Yang
- 申请人: Joo-won Lee , Kang-soo Chu , Jae-eun Park , Jong-ho Yang
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Mills & Onello, LLP
- 优先权: KR02-57462 20020919
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
In an electrode line structure of a semiconductor device and a method for forming the same, the electrode line structure comprises a semiconductor substrate, and electrode lines, which are formed on the semiconductor substrate, and have an inclined end in the long axis direction. The electrode lines each include a first line unit, which substantially functions as an electrode line, a second line unit, which has an inclined end in the long axis direction and is separated from the first line unit by a predetermined distance, and an insulating plug, which is interposed between the first line unit and the second line unit and electrically insulates the first line unit from the second line unit.
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