Invention Grant
- Patent Title: Manufacturing apparatus of semiconductor device
- Patent Title (中): 半导体器件制造装置
-
Application No.: US11089538Application Date: 2005-03-25
-
Publication No.: US07513981B2Publication Date: 2009-04-07
- Inventor: Kazutaka Miura , Shozo Noda
- Applicant: Kazutaka Miura , Shozo Noda
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP.
- Main IPC: C23C14/02
- IPC: C23C14/02

Abstract:
A load lock chamber (12) is connected in a front stage of a film forming chamber (11) through a damper and the like. A pipe to which a N2 gas and aeriform or fog-like H2O are supplied is connected to the load lock chamber (12). The pipe is led from a vaporizer (13). Inside the load lock chamber (12), a carrying section 15 on which a wafer (20) is placed is provided, whereas outside the load lock chamber (12), a cooler (14) cooling a carrying section (15) by means of liquid nitrogen is arranged. The temperature of the carrying section 15 is held at, for example, −4° C.
Public/Granted literature
- US20050241932A1 Manufacturing apparatus and manufacturing method of semiconductor device Public/Granted day:2005-11-03
Information query
IPC分类: