Invention Grant
US07514313B2 Process of forming an electronic device including a seed layer and a semiconductor layer selectively formed over the seed layer 失效
形成包括种子层和选择性地形成在种子层上的半导体层的电子器件的工艺

Process of forming an electronic device including a seed layer and a semiconductor layer selectively formed over the seed layer
Abstract:
A process of forming an electronic device can include forming an insulating layer over first and second active regions, and a field isolation region. The process can also include forming a seed layer and exposing the first active region. The process can further include selectively forming a first and second semiconductor layer over the first active region and the seed layer, respectively. The first and second semiconductor layers can be spaced-apart from each other. In one aspect, the process can include selectively forming the first and second semiconductor layers simultaneously at a substantially same point in time. In another aspect, an electronic device can include first and second transistor structures separated by a field isolation region and electrically connected by a conductive member. A semiconductor island, designed to be electrically floating, can lie between the conductive member and the base layer.
Public/Granted literature
Information query
Patent Agency Ranking
0/0