Invention Grant
US07514313B2 Process of forming an electronic device including a seed layer and a semiconductor layer selectively formed over the seed layer
失效
形成包括种子层和选择性地形成在种子层上的半导体层的电子器件的工艺
- Patent Title: Process of forming an electronic device including a seed layer and a semiconductor layer selectively formed over the seed layer
- Patent Title (中): 形成包括种子层和选择性地形成在种子层上的半导体层的电子器件的工艺
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Application No.: US11400945Application Date: 2006-04-10
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Publication No.: US07514313B2Publication Date: 2009-04-07
- Inventor: Omar Zia , Da Zhang , Venkat R. Kolagunta , Narayanan C. Ramani , Bich-Yen Nguyen
- Applicant: Omar Zia , Da Zhang , Venkat R. Kolagunta , Narayanan C. Ramani , Bich-Yen Nguyen
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/98
- IPC: H01L21/98 ; H01L21/8238

Abstract:
A process of forming an electronic device can include forming an insulating layer over first and second active regions, and a field isolation region. The process can also include forming a seed layer and exposing the first active region. The process can further include selectively forming a first and second semiconductor layer over the first active region and the seed layer, respectively. The first and second semiconductor layers can be spaced-apart from each other. In one aspect, the process can include selectively forming the first and second semiconductor layers simultaneously at a substantially same point in time. In another aspect, an electronic device can include first and second transistor structures separated by a field isolation region and electrically connected by a conductive member. A semiconductor island, designed to be electrically floating, can lie between the conductive member and the base layer.
Public/Granted literature
- US20070235813A1 Electronic device and a process for forming the electronic device Public/Granted day:2007-10-11
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