Invention Grant
- Patent Title: Adhering layers to metals with dielectric adhesive layers
- Patent Title (中): 将金属层粘附到具有介电粘合剂层的金属上
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Application No.: US11184232Application Date: 2005-07-19
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Publication No.: US07514359B2Publication Date: 2009-04-07
- Inventor: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Laylay Chua
- Applicant: Yang Yang , Chun-Ting Liu , Rose Kopf , Chen-Jung Chen , Laylay Chua
- Applicant Address: US NJ Murray Hill
- Assignee: Alcatel-Lucent USA Inc.
- Current Assignee: Alcatel-Lucent USA Inc.
- Current Assignee Address: US NJ Murray Hill
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
Public/Granted literature
- US20050255692A1 Adhering layers to metals with dielectric adhesive layers Public/Granted day:2005-11-17
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