Invention Grant
- Patent Title: Semiconductor device and wire bonding method therefor
- Patent Title (中): 半导体装置及其引线接合方法
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Application No.: US10194142Application Date: 2002-07-12
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Publication No.: US07514800B2Publication Date: 2009-04-07
- Inventor: Tsuyoshi Kida
- Applicant: Tsuyoshi Kida
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agent Darryl G. Walker
- Priority: JP2001-214954 20010716
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device (10) that may have a wire bonding structure having reduced interference between bond wires and a path of a capillary has been disclosed. Semiconductor device (10) may include bond pads (12) arranged in a line along an edge of a semiconductor chip (14) and conductive fingers (16) arranged on a substrate (18). Bond pads (12) may be electrically connected to conductive fingers (16) with bond wires (20). Bond wires (20) may be divided into a first group having a relatively short length and a second group having a relatively long length. The bond wires (20) in the first group may have bonding points on a bonding pad (12) that is closer to an edge of semiconductor chip (14) than bonding points of bond wires (20) in the second group. In this way, spacing between bond wires (20) already formed and a capillary forming an adjacent bond wire may be increased.
Public/Granted literature
- US20030011038A1 Semiconductor device and wire bonding method therefor Public/Granted day:2003-01-16
Information query
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