发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US11862552申请日: 2007-09-27
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公开(公告)号: US07515473B2公开(公告)日: 2009-04-07
- 发明人: Koichi Fukuda , Midori Morooka , Hiroyuki Dohmae
- 申请人: Koichi Fukuda , Midori Morooka , Hiroyuki Dohmae
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2005-130891 20050428; JP2005-324847 20051109
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
A semiconductor memory device includes: a memory cell array; a sense amplifier circuit for reading and writing data of the memory cell array page by page; a verify-judge circuit configured to judge write or erase completion based on the verify-read data held in the sense amplifier circuit; and data latches disposed for the respective columns in the memory cell array to be attached to the verify-judge circuit, into which column separation data are written to serve for excluding the corresponding columns from a verifying object, wherein the column separation data are automatically set in the data latches in an initial set-up mode at a power-on time so that at least a part of inaccessible columns for users are excluded from the verifying object.
公开/授权文献
- US20080025101A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2008-01-31
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