发明授权
US07517554B2 Process for producing nanostructure of mixed film of Al, Si, and/or Ge
失效
制备Al，Si和/或Ge混合膜的纳米结构的方法
- 专利标题： Process for producing nanostructure of mixed film of Al, Si, and/or Ge
- 专利标题（中）： 制备Al，Si和/或Ge混合膜的纳米结构的方法
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申请号： US11339627申请日： 2006-01-26
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公开(公告)号： US07517554B2公开(公告)日： 2009-04-14
- 发明人: Tatsuya Saito , Tohru Den , Kazuhiko Fukutani , Aya Imada
- 申请人： Tatsuya Saito , Tohru Den , Kazuhiko Fukutani , Aya Imada
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 主分类号： C23C8/00
- IPC分类号： C23C8/00
摘要：
A process for producing a nano-structure is provided which enables control of the pore diameters and the pore intervals by film formation conditions. The process produces a nano-structure of an aluminum-silicon-germanium mixed film containing silicon and germanium at a content of 20 to 70 atom % relative to aluminum, the mixed film being constituted of a matrix composed mainly of silicon and germanium in a composition ratio of SixGe1-x (0≦X≦1), and cylindrical portions mainly composed of aluminum having a diameter of not larger 30 nm in the matrix. In the process, the mixed film is formed at a film-forming rate of not higher than 150 nm/min.
公开/授权文献
- US20060127602A1 Nanostructure and process of production thereof 公开/授权日：2006-06-15
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