发明授权
- 专利标题： Area diode formation in SOI application
- 专利标题（中）： SOI应用中的二极管形成区域
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申请号： US11158021申请日： 2005-06-21
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公开(公告)号： US07517742B2公开(公告)日： 2009-04-14
- 发明人: Byoung W. Min , Laegu Kang , Michael Khazhinsky
- 申请人： Byoung W. Min , Laegu Kang , Michael Khazhinsky
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Fortkort & Houston P.C.
- 代理商 John A. Fortkort
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for making a semiconductor device is provided herein. In accordance with the method, a semiconductor stack is provided which includes a semiconductor substrate, a first semiconductor layer, and a first dielectric layer disposed between the substrate and the first semiconductor layer. A first trench is formed in the first dielectric layer which exposes a portion of the substrate, and a first implant region is formed in the first trench. Cathode and anode regions are formed in the first implant region.
公开/授权文献
- US20060284278A1 Area diode formation in SOI application 公开/授权日：2006-12-21
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