A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a second source/drain in the fin on a second side of the channel region; removing a portion of the substrate from under at least a portion of the first and second source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.