Invention Grant
- Patent Title: Recessed drain extensions in transistor device
- Patent Title (中): 晶体管器件中的凹槽漏极延伸
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Application No.: US11772508Application Date: 2007-07-02
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Publication No.: US07517779B2Publication Date: 2009-04-14
- Inventor: Lindsey H. Hall
- Applicant: Lindsey H. Hall
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Wad J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763
Abstract:
A method of forming an integrated circuit transistor (50). The method provides a first semiconductor region (52) and forms (110) a gate structure (54x) in a fixed position relative to the first semiconductor region. The gate structure has a first sidewall and a second sidewall (59x). The method also forms at least a first layer (58x, 60x) adjacent the first sidewall and the second sidewall. The method also forms (120) at least one recess (62x) in the first semiconductor region and extending laterally outward from the gate structure. Additional steps in the method are first, oxidizing (130) the at least one recess such that an oxidized material is formed therein, second, stripping (140) at least a portion of the oxidized material, and third, forming (160) a second semiconductor region (66x) in the at least one recess.
Public/Granted literature
- US20070278524A1 Recessed Drain Extensions in Transistor Device Public/Granted day:2007-12-06
Information query
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