发明授权
- 专利标题: Electron beam irradiating apparatus
- 专利标题(中): 电子束照射装置
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申请号: US11385483申请日: 2006-03-21
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公开(公告)号: US07518131B2公开(公告)日: 2009-04-14
- 发明人: Tsutomu Nanataki , Iwao Ohwada , Yuki Bessho , Takayoshi Akao
- 申请人: Tsutomu Nanataki , Iwao Ohwada , Yuki Bessho , Takayoshi Akao
- 申请人地址: JP Nagoya
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya
- 代理机构: Burr & Brown
- 优先权: JP2006-046350 20060223
- 主分类号: A61N5/00
- IPC分类号: A61N5/00
摘要:
An electron beam irradiating apparatus includes a chamber being kept under vacuum, and housing a planar electron emitting element and a positioning unit and an object to be irradiated is directly irradiated with an electron beam emitted from the element. The planar electron emitting element includes: an emitter portion composed of a dielectric material; and a first electrode and a second electrode applied with a driving voltage for emitting electrons, and the first electrode is formed on a first surface of the emitter portion and has a plurality of through-holes where the emitter portion is exposed, a surface of the first electrode facing to the emitter portion around the through-holes is separated from the emitter portion, and the electron beam is emitted from the first surface of the emitter portion through the through-holes.
公开/授权文献
- US20070040130A1 Electron beam irradiating apparatus 公开/授权日:2007-02-22
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