发明授权
- 专利标题： Piezoelectric single crystal and piezoelectric single-crystal device and method for manufacturing the same
- 专利标题（中）： 压电单晶和压电单晶器件及其制造方法
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申请号： US10575955申请日： 2004-10-14
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公开(公告)号： US07518292B2公开(公告)日： 2009-04-14
- 发明人: Mitsuyoshi Matsushita , Yosuke Iwasaki
- 申请人： Mitsuyoshi Matsushita , Yosuke Iwasaki
- 申请人地址： JP Tokyo
- 专利权人： JFE Mineral Company, Ltd.
- 当前专利权人： JFE Mineral Company, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2003-353687 20031014
- 国际申请： PCT/JP2004/015558 WO 20041014
- 国际公布： WO2005/035840 WO 20050421
- 主分类号： H01L41/187
- IPC分类号： H01L41/187
摘要：
An inexpensive piezoelectric single-crystal device being excellent in the piezoelectric characteristics and having a complex perovskite structure can be provided by adding a specific additive to a lead magnesium niobate-lead titanate (PMN-PT) single crystal or a lead zinc niobate-lead titanate (PZN-PT or PZNT) single crystal. Specifically, the piezoelectric single crystal has a complex perovskite structure and is formed of a composition containing 35 to 98 mol % lead magnesium niobate [Pb(Mg1/3Nb2/3)O3] or lead zinc niobate [Pb(Zn1/3Nb2/3)O3], 0.1 to 64.9 mol % lead titanate [PbTiO3], and 0.05 to 30 mol % lead indium niobate [Pb(In1/2Nb1/2)O3] wherein calcium is substituted for 0.05 to 10 mol % lead in the composition.
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