发明授权
- 专利标题: Method for fabricating image sensor capable of increasing photosensitivity
- 专利标题(中): 制造能提高光敏度的图像传感器的方法
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申请号: US11318638申请日: 2005-12-28
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公开(公告)号: US07521315B2公开(公告)日: 2009-04-21
- 发明人: Myoung-Shik Kim , Hyung-Jun Kim
- 申请人: Myoung-Shik Kim , Hyung-Jun Kim
- 申请人地址: KR Chungcheongbuk-do
- 专利权人: MagnaChip Semiconductor, Ltd.
- 当前专利权人: MagnaChip Semiconductor, Ltd.
- 当前专利权人地址: KR Chungcheongbuk-do
- 代理机构: Morgan Lewis & Bockius LLP
- 优先权: KR10-2004-0115974 20041230
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode.