发明授权
- 专利标题: Growth of uniform crystals
- 专利标题(中): 均匀晶体生长
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申请号: US10825801申请日: 2004-04-01
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公开(公告)号: US07524375B1公开(公告)日: 2009-04-28
- 发明人: Gerald W. Iseler , David F. Bliss , Vladimir L. Tassev
- 申请人: Gerald W. Iseler , David F. Bliss , Vladimir L. Tassev
- 申请人地址: US DC Washington
- 专利权人: The United States of America as represented by the Secretary of the Air Force
- 当前专利权人: The United States of America as represented by the Secretary of the Air Force
- 当前专利权人地址: US DC Washington
- 代理机构: AFMCLO/JAZ
- 代理商 Thomas C. Stover
- 主分类号: C30B11/00
- IPC分类号: C30B11/00
摘要:
The invention provides for growing semiconductor and other crystals by loading a vessel in its lower portion with a seed crystal, loading a charge thereon in the vessel, heating the charge to a molten state and electromagnetically stirring the melt using magnetic and electric fields to obtain a more uniform composition of melt and slowly reducing the temperature of the melt over the crystal to grow a more uniform crystal from such stirred melt.
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