发明授权
US07524552B2 Copper foil provided with dielectric layer for forming capacitor layer, copper clad laminate for formation of capacitor layer using such copper foil with dielectric layer, and method for manufacturing producing such copper foil with dielectric layer for formation of capacitor layer
失效
提供用于形成电容器层的电介质层的铜箔,使用这种具有电介质层的铜箔形成电容器层的覆铜层压板以及用于形成电容器层的电介质层的制造方法
- 专利标题: Copper foil provided with dielectric layer for forming capacitor layer, copper clad laminate for formation of capacitor layer using such copper foil with dielectric layer, and method for manufacturing producing such copper foil with dielectric layer for formation of capacitor layer
- 专利标题(中): 提供用于形成电容器层的电介质层的铜箔,使用这种具有电介质层的铜箔形成电容器层的覆铜层压板以及用于形成电容器层的电介质层的制造方法
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申请号: US10532717申请日: 2003-10-29
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公开(公告)号: US07524552B2公开(公告)日: 2009-04-28
- 发明人: Toshiko Yokota , Tetsuhiro Matsunaga , Susumu Takahashi , Hideaki Matsushima , Takuya Yamamoto , Makoto Dobashi
- 申请人: Toshiko Yokota , Tetsuhiro Matsunaga , Susumu Takahashi , Hideaki Matsushima , Takuya Yamamoto , Makoto Dobashi
- 申请人地址: JP Tokyo
- 专利权人: Mitsui Mining and Smelting Co., Ltd.
- 当前专利权人: Mitsui Mining and Smelting Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Rothwell, Figg, Ernst & Manbeck, P.C.
- 优先权: JP2002-315894 20021030
- 国际申请: PCT/JP03/13818 WO 20031029
- 国际公布: WO2004/040604 WO 20040513
- 主分类号: B32B3/00
- IPC分类号: B32B3/00 ; B65D85/00
摘要:
To provide a dielectric-layer-provided copper foil or the like for extremely improving the product yield while making the most use of the increase effect of an electric capacity of a thin dielectric layer using the sputtering vapor deposition method.In the case of dielectric-layer-provided copper foils respectively having a dielectric layer on one side of a copper foil, the dielectric layer 6 is an inorganic-oxide sputter film having a thickness of 1.0 μm or less and formed on the one side of the copper foil in accordance with the sputtering vapor deposition method and the dielectric-layer-provided copper foils for respectively forming a capacitor layer, characterized in that a pit-like defective portion generated on the inorganic-oxide sputter film is sealed by polyimide resin are used.
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