发明授权
US07524755B2 Entire encapsulation of Cu interconnects using self-aligned CuSiN film
有权
使用自对准CuSiN膜的Cu互连的全封装
- 专利标题: Entire encapsulation of Cu interconnects using self-aligned CuSiN film
- 专利标题(中): 使用自对准CuSiN膜的Cu互连的全封装
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申请号: US11358934申请日: 2006-02-22
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公开(公告)号: US07524755B2公开(公告)日: 2009-04-28
- 发明人: Johnny Widodo , Bei Chao Zhang , Tong Qing Chen , Yong Kong Siew , Fan Zhang , San Leong Liew , John Sudijono , Liang Choo Hsia
- 申请人: Johnny Widodo , Bei Chao Zhang , Tong Qing Chen , Yong Kong Siew , Fan Zhang , San Leong Liew , John Sudijono , Liang Choo Hsia
- 申请人地址: SG Singapore
- 专利权人: Chartered Semiconductor Manufacturing, Ltd.
- 当前专利权人: Chartered Semiconductor Manufacturing, Ltd.
- 当前专利权人地址: SG Singapore
- 代理机构: Horizon IP Pte Ltd
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier layer over the sidewalls and bottom of the interconnect opening by reacting with the first copper layer. We then form an interconnect over the CuSiN layer filling the interconnect opening. We can form a CuSiN cap layer on the top surface of the interconnect.