发明授权
US07525150B2 High voltage double diffused drain MOS transistor with medium operation voltage
有权
具有中等工作电压的高压双扩散漏极MOS晶体管
- 专利标题： High voltage double diffused drain MOS transistor with medium operation voltage
- 专利标题（中）： 具有中等工作电压的高压双扩散漏极MOS晶体管
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申请号： US10819527申请日： 2004-04-07
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公开(公告)号： US07525150B2公开(公告)日： 2009-04-28
- 发明人: Fu-Hsin Chen , Yi-Chun Lin , Ruey-Hsin Liu
- 申请人： Fu-Hsin Chen , Yi-Chun Lin , Ruey-Hsin Liu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A method of fabricating a high voltage MOS transistor with a medium operation voltage on a semiconductor wafer. The transistor has a double diffused drain (DDD) and a medium operation voltage such as 6 to 10 volts, which is advantageous for applications having both low and higher operation transistor devices. The second diffusion region of the DDD is self-aligned to the spacer on the sidewalls of the gate and gate dielectric, so that the transistor size may be decreased.
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