发明授权
- 专利标题： High voltage transistor structure for semiconductor device
- 专利标题（中）： 半导体器件用高压晶体管结构
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申请号： US11387573申请日： 2006-03-23
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公开(公告)号： US07525155B2公开(公告)日： 2009-04-28
- 发明人: Fu-Hsin Chen , Ruey-Hsin Liu
- 申请人： Fu-Hsin Chen , Ruey-Hsin Liu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L29/74
摘要：
A high voltage MOS transistor has a thermally-driven-in first doped region and a second doped region that form a double diffused drain structure. Boundaries of the first doped region are graded. A gate-side boundary of the first doped region extends laterally below part of the gate electrode. The second doped region is formed within the first doped region. A gate-side boundary of the second doped region is separated from a closest edge of the gate electrode by a first spaced distance. The gate-side boundary of the second doped region is separated from a closest edge of the spacer by a second spaced distance. The first spaced distance is greater than the second spaced distance. An isolation-side boundary of the second doped region may be separated from an adjacent isolation structure by a third spaced distance.
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