发明授权
- 专利标题: Method for forming heat sinks on silicon on insulator wafers
- 专利标题(中): 在绝缘体硅片上形成散热片的方法
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申请号: US11508495申请日: 2006-08-22
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公开(公告)号: US07528012B1公开(公告)日: 2009-05-05
- 发明人: Peter J. Hopper , Iouri Mirgorodski , Vladislav Vashchenko , Peter Johnson
- 申请人: Peter J. Hopper , Iouri Mirgorodski , Vladislav Vashchenko , Peter Johnson
- 申请人地址: US CA Santa Clara
- 专利权人: National Semiconductor Corporation
- 当前专利权人: National Semiconductor Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Beyer Law Group LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
An apparatus and method for a heat sink to dissipate the heat sourced by the encapsulated transistors in a SOI wafer. The apparatus includes a transistor formed in the active silicon layer of the wafer. The active surface is formed over an oxide layer and a bulk silicon layer. A heat sink is formed in the bulk silicon layer and configured to sink heat through the bulk silicon layer, to the back surface of the wafer. After the transistor is fabricated, the heat sink is formed by masking, patterning and etching the back surface of the wafer to form plugs in the bulk silicon layer. The plug extends through the thickness of the bulk layer to the oxide layer. Thereafter, the plug is filled with a thermally conductive material, such as a metal or DAG (thermally conductive paste). During operation, heat from the transistor is dissipated through the heat sink. In various embodiments of the invention, the plug hole is formed using either an anisotropic plasma or wet etch.
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