发明授权
US07528027B1 Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel
失效
用于在V形通道的尖端处制造具有超薄SOI的器件的结构和方法
- 专利标题： Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel
- 专利标题（中）： 用于在V形通道的尖端处制造具有超薄SOI的器件的结构和方法
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申请号： US12054727申请日： 2008-03-25
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公开(公告)号： US07528027B1公开(公告)日： 2009-05-05
- 发明人: Huilong Zhu , Mahender Kumar , Dan M. Mocuta , Ravikumar Ramachandran , Wenjuan Zhu
- 申请人： Huilong Zhu , Mahender Kumar , Dan M. Mocuta , Ravikumar Ramachandran , Wenjuan Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Joseph Petrokaitis
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
An SOI CMOS structure includes a v-shape trench in a pFet region. The v-shape trench has a surface in a (111) plane and extends into an SOI layer in the pFet region. A layer, such as a gate oxide or high-k material, is formed in the v-shape trench. Poly-Si is deposited on top of the layer.