发明授权
- 专利标题： Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer
- 专利标题（中）： 形成电子器件的工艺包括与半导体层内的开口相邻的致密的氮化物层
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申请号： US11433298申请日： 2006-05-12
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公开(公告)号： US07528078B2公开(公告)日： 2009-05-05
- 发明人: Toni D. Van Gompel , Kuang-Hsin Chen , Laegu Kang , Rode R. Mora , Michael D. Turner
- 申请人： Toni D. Van Gompel , Kuang-Hsin Chen , Laegu Kang , Rode R. Mora , Michael D. Turner
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A process of forming an electronic device can include patterning a semiconductor layer to define an opening extending to an insulating layer, wherein the insulating layer lies between a substrate and the semiconductor layer. After patterning the semiconductor layer, the opening can have a bottom, and the semiconductor layer can have a sidewall and a surface. The surface can be spaced apart from the insulating layer, and the sidewall can extend from the surface towards the insulating layer. The process can also include depositing a nitride layer within the opening, wherein depositing is performed using a PECVD technique. The process can further include densifying the nitride layer. The process can still further include removing a part of the nitride layer, wherein a remaining portion of the nitride layer can lie within the opening and be spaced apart from the surface.
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