发明授权
US07528453B2 Field effect transistor with local source/drain insulation and associated method of production
有权
具有局部源极/漏极绝缘的场效应晶体管及相关生产方法
- 专利标题: Field effect transistor with local source/drain insulation and associated method of production
- 专利标题(中): 具有局部源极/漏极绝缘的场效应晶体管及相关生产方法
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申请号: US10530634申请日: 2003-09-19
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公开(公告)号: US07528453B2公开(公告)日: 2009-05-05
- 发明人: Jürgen Holz , Klaus Schrüfer , Helmut Tews
- 申请人: Jürgen Holz , Klaus Schrüfer , Helmut Tews
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Brinks Hofer Gilson & Lione
- 优先权: DE10246718 20021007
- 国际申请: PCT/DE03/03130 WO 20030919
- 国际公布: WO2004/034458 WO 20040422
- 主分类号: H01L27/088
- IPC分类号: H01L27/088
摘要:
A field-effect transistor (FET) with local source-drain insulation is described. The FET includes a semiconductor substrate, source and drain depressions, a depression insulation layer, an electrically conductive filling layer, a gate dielectric, and a gate layer. The depression insulation layer is formed at least in bottom regions of the source and drain depressions. The electrically conductive filling layer realizes source and drain regions and fills the source and drain depressions at a surface of the depression insulation layer. The gate dielectric is formed at a substrate surface between the source and drain depressions. The gate layer (is formed at a surface of the gate dielectric. The source and drain depressions have, in an upper region, a widening with a predetermined death for realizing defined channel connection regions.