发明授权
US07531444B2 Method to create air gaps using non-plasma processes to damage ILD materials
有权
使用非等离子体工艺创造气隙以破坏ILD材料的方法
- 专利标题： Method to create air gaps using non-plasma processes to damage ILD materials
- 专利标题（中）： 使用非等离子体工艺创造气隙以破坏ILD材料的方法
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申请号： US10906267申请日： 2005-02-11
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公开(公告)号： US07531444B2公开(公告)日： 2009-05-12
- 发明人: Christos D. Dimitrakopoulos , Daniel C. Edelstein , Vincent J. McGahay , Satyanarayana V. Nittta , Kevin S. Petrarca , Shom Ponoth , Shahab Siddiqui
- 申请人： Christos D. Dimitrakopoulos , Daniel C. Edelstein , Vincent J. McGahay , Satyanarayana V. Nittta , Kevin S. Petrarca , Shom Ponoth , Shahab Siddiqui
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Grenblum & Bernstein P.L.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method of forming airgaps is provided where a blocking mask is applied to a substrate to shield a portion of the substrate from a beam of energy. After irradiation, the blocking mask is removed and a capping material is applied to the substrate. Alternatively, the capping material may be applied before irradiation. The capping material is perforated to allow an etchant to pass therethrough to the substrate below the capping material. The exposed portions of the substrate are removed from underneath the capping material by etching. The capping material is then sealed leaving sealed airgaps within the substrate.
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