发明授权
US07531842B2 Method for etching a tapered bore in a silicon substrate, and a semiconductor wafer comprising the substrate
有权
用于蚀刻硅衬底中的锥孔的方法，以及包括该衬底的半导体晶片
- 专利标题： Method for etching a tapered bore in a silicon substrate, and a semiconductor wafer comprising the substrate
- 专利标题（中）： 用于蚀刻硅衬底中的锥孔的方法，以及包括该衬底的半导体晶片
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申请号： US10971849申请日： 2004-10-22
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公开(公告)号： US07531842B2公开(公告)日： 2009-05-12
- 发明人: Colin Stephen Gormley
- 申请人： Colin Stephen Gormley
- 申请人地址： US MA Norwood
- 专利权人： Analog Devices, Inc.
- 当前专利权人： Analog Devices, Inc.
- 当前专利权人地址： US MA Norwood
- 代理机构： Bromberg & Sunstein LLP
- 主分类号： H01L27/15
- IPC分类号： H01L27/15
摘要：
A semiconductor wafer comprises an SOI comprising a device layer on an oxide layer supported on a handle layer. Micro-mirrors are formed in the device layer, and access bores extend through the handle layer and the oxide layer to the micro-mirrors for accommodating optical fibers to the micro-mirrors. The access bores are accurately aligned with the micro-mirrors, and the access bores are accurately formed of circular cross-section. Each access bore comprises a tapered lead-in portion extending to a parallel portion. The diameter of the parallel portion is selected so that the optical fibers are a tight fit therein for securing the optical fibers in alignment with the micro-mirrors. The tapered lead-in portions of the access bores are formed to a first depth by a first dry isotropic etch for accurately forming the taper and the circular cross-section of the tapered lead-in portions. The parallel portions are formed from the first depth to a second face of the handle layer by a second dry etch, namely, an anisotropic etch carried out using the Bosch process. By so etching the access bores the access bores are accurately formed of circular transverse cross-section and of accurate dimensions.