发明授权
- 专利标题: Antifuse circuit and method for selectively programming thereof
- 专利标题(中): 防腐电路及其选择性编程方法
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申请号: US11737506申请日: 2007-04-19
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公开(公告)号: US07532533B2公开(公告)日: 2009-05-12
- 发明人: Thomas W. Andre , Chitra K. Subramanian
- 申请人: Thomas W. Andre , Chitra K. Subramanian
- 申请人地址: US AZ Chandler
- 专利权人: Everspin Technologies, Inc.
- 当前专利权人: Everspin Technologies, Inc.
- 当前专利权人地址: US AZ Chandler
- 代理机构: Ingrassia, Fisher & Lorenz, P.C.
- 主分类号: G11C17/18
- IPC分类号: G11C17/18
摘要:
An antifuse circuit provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse has been previously programmed to a low resistance state in response to a program voltage. A sense amplifier provides the resistance state signal. A plurality of reference magnetic tunnel junctions are coupled in parallel and to the sense amplifier, each having a resistance within a range to provide a collective resistance that can be determined by the sense amplifier to differ from each resistance state of the MTJ antifuse. A write circuit selectively provides a current sufficient to create the program voltage when the write circuit is enabled to program the antifuse magnetic tunnel junction. Upon detecting a change in resistance in the MTJ antifuse, the write circuit reduces current supplied to the antifuse. Multiple antifuses may be programmed concurrently. Gate oxide thicknesses of transistors are adjusted for optimal performance.
公开/授权文献
- US20070188190A1 ANTIFUSE CIRCUIT 公开/授权日:2007-08-16