发明授权
- 专利标题: Multilayer interconnect structure containing air gaps and method for making
- 专利标题(中): 包含气隙的多层互连结构和制造方法
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申请号: US11429708申请日: 2006-05-08
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公开(公告)号: US07534696B2公开(公告)日: 2009-05-19
- 发明人: Christopher V. Jahnes , Satyanarayana V. Nitta , Kevin S. Petrarca , Katherine L. Saenger
- 申请人: Christopher V. Jahnes , Satyanarayana V. Nitta , Kevin S. Petrarca , Katherine L. Saenger
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Robert M. Trepp, Esq.
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
A multilevel air-gap-containing interconnect structure and a method of fabricating the same are provided. The multilevel air-gap-containing interconnect structure includes a collection of interspersed line levels and via levels, with via levels comprising conductive vias embedded in one or more dielectric layers in which the dielectric layers are solid underneath and above line features in adjacent levels, and perforated between line features. The line levels contain conductive lines and an air-gap-containing dielectric. A solid dielectric bridge layer, containing conductive contacts and formed by filling in a perforated dielectric layer, is disposed over the collection of interspersed line and via levels.