发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11094182申请日： 2005-03-31
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公开(公告)号： US07534717B2公开(公告)日： 2009-05-19
- 发明人: Hideshi Miyajima , Keiji Fujita , Hideaki Masuda , Rempei Nakata , Miyoko Shimada
- 申请人： Hideshi Miyajima , Keiji Fujita , Hideaki Masuda , Rempei Nakata , Miyoko Shimada
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2004-109243 20040401
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/4763
摘要：
The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the insulating film of an organic material and the interlayer insulating film with electron beams, thereby curing at least the insulating film of an organic material, are proposed.
公开/授权文献
- US20050250311A1 Method of manufacturing semiconductor device 公开/授权日：2005-11-10
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