Invention Grant
US07534899B2 Aromatic enediyne derivatives, organic semiconductor thin films using the same and manufacturing methods thereof, and electronic devices incorporating such films
有权
芳香族烯衍生物,使用该衍生物的有机半导体薄膜及其制造方法以及包含这种膜的电子器件
- Patent Title: Aromatic enediyne derivatives, organic semiconductor thin films using the same and manufacturing methods thereof, and electronic devices incorporating such films
- Patent Title (中): 芳香族烯衍生物,使用该衍生物的有机半导体薄膜及其制造方法以及包含这种膜的电子器件
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Application No.: US11583085Application Date: 2006-10-19
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Publication No.: US07534899B2Publication Date: 2009-05-19
- Inventor: Eun Jeong Jeong , Hyun Sik Moon , Kook Min Han
- Applicant: Eun Jeong Jeong , Hyun Sik Moon , Kook Min Han
- Applicant Address: KR Gyeonggi-Do
- Assignee: Smasung Electronics Co., Ltd.
- Current Assignee: Smasung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2005-0113372 20051125; KR10-2005-0113373 20051125
- Main IPC: C07D409/14
- IPC: C07D409/14

Abstract:
Disclosed are aromatic enediyne derivatives, methods of manufacturing organic semiconductor thin films from such aromatic enediyne derivatives, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.
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