发明授权
US07535754B2 Integrated circuit memory devices with MRAM voltage divider strings therein
有权
具有MRAM分压器串的集成电路存储器件
- 专利标题： Integrated circuit memory devices with MRAM voltage divider strings therein
- 专利标题（中）： 具有MRAM分压器串的集成电路存储器件
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申请号： US11264539申请日： 2005-11-01
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公开(公告)号： US07535754B2公开(公告)日： 2009-05-19
- 发明人: Frederick A. Perner , Kenneth J. Eldredge
- 申请人： Frederick A. Perner , Kenneth J. Eldredge
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Inc.
- 当前专利权人： Samsung Electronics Co., Inc.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A memory device and method of reading the memory device is disclosed. The memory device includes a first string of MRAM cells and a second string of MRAM cells. The first string of MRAM cells include a plurality of MRAM cells connected in series and the second string of MRAM cells include another plurality of MRAM cells connected in series. A common connection is controllably connectable to one end of the first string of MRAM cells, and to one end of the second string of MRAM cells.
公开/授权文献
- US20070097733A1 Controllably connectable strings of MRAM cells 公开/授权日：2007-05-03
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