发明授权
- 专利标题： Copper interconnection with conductive polymer layer and method of forming the same
- 专利标题（中）： 与导电聚合物层的铜互连及其形成方法
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申请号： US11075072申请日： 2005-03-08
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公开(公告)号： US07538434B2公开(公告)日： 2009-05-26
- 发明人: Chien-Hsueh Shih , Minghsing Tsai , Hung-Wen Su , Shau-Lin Shue
- 申请人： Chien-Hsueh Shih , Minghsing Tsai , Hung-Wen Su , Shau-Lin Shue
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A conductive polymer between two metallic layers acts a glue layer, a barrier layer or an activation seed layer. The conductive polymer layer is employed to encapsulate a copper interconnection structure to prevent copper diffusion into any overlying layers and improve adhesive characteristics between the copper and any overlying layers.
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