发明授权
- 专利标题： Semiconductor laser
- 专利标题（中）： 半导体激光器
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申请号： US11258053申请日： 2005-10-26
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公开(公告)号： US07539225B2公开(公告)日： 2009-05-26
- 发明人: Yoshihiko Hanamaki , Kenichi Ono
- 申请人： Yoshihiko Hanamaki , Kenichi Ono
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： JP2005-032668 20050209
- 主分类号： H01S3/04
- IPC分类号： H01S3/04 ; H01S3/14
摘要：
In a semiconductor laser, a n-type AlGaInP clad layer is formed on a n-type GaAs substrate and an active layer having an emission wavelength of 600 to 850 nm is formed on the n-type AlGaInP clad layer. A p-type AlGaInP clad layer is formed on the active layer and a p-type AlGaAs contact layer in which the Al composition is controlled so that the p-type AlGaAs contact layer has an optical bandgap larger than that of the active layer is formed on the p-type AlGaInP clad layer. A p-type GaAs cap layer is formed on the p-type AlGaAs contact layer.
公开/授权文献
- US20060176923A1 Semiconductor laser 公开/授权日：2006-08-10
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