发明授权
- 专利标题: Surface emitting laser device having double channeled structure
- 专利标题(中): 具有双沟道结构的表面发射激光器件
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申请号: US11193411申请日: 2005-08-01
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公开(公告)号: US07539229B2公开(公告)日: 2009-05-26
- 发明人: Taek Kim , Ki-sung Kim
- 申请人: Taek Kim , Ki-sung Kim
- 申请人地址: KR Suwon-Si, Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si, Gyeonggi-Do
- 代理机构: Buchanan Ingersoll & Rooney PC
- 优先权: KR10-2004-0113925 20041228
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
Embodiments provide a vertical external cavity surface emitting laser (VECSEL) that may provide a uniform current density in an active layer using a double current injecting channel. The surface emitting laser device may include a double channel current injection structure for uniformly applying current to an active layer, wherein the double channel current injection structure may include: a first current injection channel, which may allow current to be injected toward a central portion of an aperture, which may be a light beam output region formed in the active layer, and may have a smaller diameter than the aperture: and a second current injection channel, which may allow current to be injected toward an edge of the aperture and may be located around the aperture.
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