发明授权

  • 专利标题: Mask at frequency domain and method for preparing the same and exposing system using the same
  • 专利标题(中): 频域掩模及其制备方法及曝光系统
  • 申请号: US11254729
    申请日: 2005-10-21
  • 公开(公告)号: US07541116B2
    公开(公告)日: 2009-06-02
  • 发明人: Chun Yu Lin
  • 申请人: Chun Yu Lin
  • 申请人地址: TW Hsinchu
  • 专利权人: Promos Technologies Inc.
  • 当前专利权人: Promos Technologies Inc.
  • 当前专利权人地址: TW Hsinchu
  • 代理机构: Oliff & Berridge, PLC
  • 主分类号: G03F1/00
  • IPC分类号: G03F1/00
Mask at frequency domain and method for preparing the same and exposing system using the same
摘要:
A mask at frequency domain comprises a plurality of amplitude patterns positioned on a first surface of the mask and a plurality of phase patterns positioned on a second surface of the mask. The amplitude patterns have different vertical thicknesses to change the amplitude of an exposing light, and the phase patterns have different vertical thicknesses to change the phase of the exposing light. Preferably, the amplitude patterns are made of inorganic material, such as molybdenum silicide (MoSi), and the phase patterns are made of transparent material, such as quartz. The amplitude patterns and phase patterns are the Fourier transform of a circuit layout, and their numbers and positions are correspondent with each other.
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