发明授权
- 专利标题： Manufacturing process of thin film transistor
- 专利标题（中）： 薄膜晶体管的制造工艺
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申请号： US11354032申请日： 2006-02-15
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公开(公告)号： US07541226B2公开(公告)日： 2009-06-02
- 发明人: Hiroyuki Shimada
- 申请人： Hiroyuki Shimada
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2005-088138 20050325
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A manufacturing process of a thin film transistor, includes: forming a silicon film of a preset thickness, in which film stress becomes under 2.0×109 dyne/cm2 in absolute value, on one surface of a transparent substrate; and forming a thin film transistor on other surface of the transparent substrate on which the silicon film is not formed.
公开/授权文献
- US20060216420A1 Manufacturing process of thin film transistor 公开/授权日：2006-09-28
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