发明授权
- 专利标题: Stress relaxation, selective nitride phase removal
- 专利标题(中): 应力松弛,选择性氮化物相去除
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申请号: US12112457申请日: 2008-04-30
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公开(公告)号: US07541277B1公开(公告)日: 2009-06-02
- 发明人: Kevin Shawn Petrarca , John Charles Petrus , Karl W. Barth , Kaushik A. Kumar
- 申请人: Kevin Shawn Petrarca , John Charles Petrus , Karl W. Barth , Kaushik A. Kumar
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Saidman Design Law Group
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
A method for forming a dielectric cap layer over an interconnect layer formed by a back-end-of-the-line (BEOL) interconnect process, the interconnect process including: lithography, reactive ion etching (RIE), metal filling of BEOL conductors, and chemical-mechanical polishing (CMP), wherein a sacrificial material resides between conductors of the interconnect layer, and wherein the dielectric cap layer is made porous through an oxidation process.