发明授权
- 专利标题： Phase-change RAM and method for fabricating the same
- 专利标题（中）： 相变RAM及其制造方法
-
申请号： US11285175申请日： 2005-11-23
-
公开(公告)号： US07541633B2公开(公告)日： 2009-06-02
- 发明人: Sang-mock Lee , Jin-heong Yim , Yoon-ho Khang , Jin-seo Noh , Dong-seok Suh
- 申请人： Sang-mock Lee , Jin-heong Yim , Yoon-ho Khang , Jin-seo Noh , Dong-seok Suh
- 申请人地址： KR Suwon-Si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-do
- 代理机构： Buchanan Ingersoll & Rooney PC
- 优先权： KR10-2005-0016183 20050225
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.
公开/授权文献
- US20060192193A1 Phase-change RAM and method for fabricating the same 公开/授权日：2006-08-31
信息查询
IPC分类:
